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  Wolfspeed’s CGHV96100F2
 ID#: 277865   Date posted: June 13, 2017;   Expire date: September 25, 2020;             8 visits             Flag as Spam
Price:
₦717  
City:
Abuja  
Ad Details:
 Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance. For more information please visit www.rayemit.com  
Contact Name:
alex kosh  
Contact Phone:
8882454658  
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